1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM5N800HD

RM5N800HD

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM5N800HD Image

The RM5N800HD from Rectron Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 1200 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for RM5N800HD can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM5N800HD
  • Manufacturer
    Rectron Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    1200 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    22.8 nC
  • Power Dissipation
    98 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-263(D2-PAK)
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products