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RM60N75LD

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The RM60N75LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 6.8 to 8.5 milliohm, Drain Source Breakdown Voltage 84 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM60N75LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM60N75LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    84 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    6.8 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    84 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    100 nC
  • Power Dissipation
    140 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252(D-PAK)
  • Applications
    Power switching application, Hard Switched and High Frequency Circuits, Uninterruptible Power Supply

Technical Documents
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