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RM60N80D3

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The RM60N80D3 from Rectron Semiconductor is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 7.2 to 13 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.3 V. Tags: Surface Mount. More details for RM60N80D3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM60N80D3
  • Manufacturer
    Rectron Semiconductor
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    7.2 to 13 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.3 V
  • Gate Charge
    29 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN3x3
  • Applications
    SMPS and general purpose applications, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
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