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RM6A2N250LD

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The RM6A2N250LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 6.2 A, Drain Source Resistance 430 to 550 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for RM6A2N250LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM6A2N250LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.2 A
  • Drain Source Resistance
    430 to 550 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    10.4 nC
  • Power Dissipation
    56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252-2L
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
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