The RM6A2N250LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 6.2 A, Drain Source Resistance 430 to 550 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for RM6A2N250LD can be seen below.