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RM6N800T2

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The RM6N800T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 750 to 900 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for RM6N800T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM6N800T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    750 to 900 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    22.8 nC
  • Power Dissipation
    98 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
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