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RM80N100T2

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The RM80N100T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 7.2 to 12 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Through Hole. More details for RM80N100T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM80N100T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    7.2 to 12 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    65 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification

Technical Documents
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