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RM80N30DN

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The RM80N30DN from Rectron Semiconductor is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 2.9 to 5.5 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for RM80N30DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM80N30DN
  • Manufacturer
    Rectron Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    2.9 to 5.5 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    24 to 34 nC
  • Power Dissipation
    66 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    PPAK3X3
  • Applications
    MB / VGA / Vcore, POL Applications, SMPS 2nd SR

Technical Documents
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