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RM80N80HD

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The RM80N80HD from Rectron Semiconductor is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 7.2 to 8.5 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM80N80HD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM80N80HD
  • Manufacturer
    Rectron Semiconductor
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    7.2 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    100 nC
  • Power Dissipation
    170 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-263(D2-PAK)
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen free

Technical Documents
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