1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM80N80T2

RM80N80T2

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM80N80T2 Image

The RM80N80T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 7 to 8.5 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM80N80T2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM80N80T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    7 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    90 nC
  • Power Dissipation
    170 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen free

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products