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RM830

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RM830 Image

The RM830 from Rectron Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 1150 to 1400 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM830 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM830
  • Manufacturer
    Rectron Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    1150 to 1400 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    20 nC
  • Power Dissipation
    87.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Technical Documents
View details on the manufacturer's website
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