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RM8A5P60S8

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RM8A5P60S8 Image

The RM8A5P60S8 from Rectron Semiconductor is a MOSFET with Continous Drain Current -8.5 A, Drain Source Resistance 23 to 40 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RM8A5P60S8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM8A5P60S8
  • Manufacturer
    Rectron Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.5 A
  • Drain Source Resistance
    23 to 40 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    43.8 to 88 nC
  • Power Dissipation
    4.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    POL Applications, Load Switch, LED Application

Technical Documents
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