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RMD02P60ES9

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RMD02P60ES9 Image

The RMD02P60ES9 from Rectron Semiconductor is a MOSFET with Continous Drain Current -0.47 A, Drain Source Resistance 2100 to 3300 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.8 to -0.8 V. Tags: Surface Mount. More details for RMD02P60ES9 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMD02P60ES9
  • Manufacturer
    Rectron Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.47 A
  • Drain Source Resistance
    2100 to 3300 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.8 to -0.8 V
  • Gate Charge
    1.6 nC
  • Power Dissipation
    0.83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-363

Technical Documents
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