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RMD1N25ES9

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RMD1N25ES9 Image

The RMD1N25ES9 from Rectron Semiconductor is a MOSFET with Continous Drain Current 1.1 A, Drain Source Resistance 500 to 700 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1.1 V. Tags: Surface Mount. More details for RMD1N25ES9 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMD1N25ES9
  • Manufacturer
    Rectron Semiconductor
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.1 A
  • Drain Source Resistance
    500 to 700 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1.1 V
  • Gate Charge
    0.0006 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High power and current handing capability, Lead free product is acquired, Surface mount package

Technical Documents
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