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RMD4A5P20TS

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RMD4A5P20TS Image

The RMD4A5P20TS from Rectron Semiconductor is a MOSFET with Continous Drain Current -4.5 A, Drain Source Resistance 23 to 68 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.5 V. Tags: Surface Mount. More details for RMD4A5P20TS can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMD4A5P20TS
  • Manufacturer
    Rectron Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.5 A
  • Drain Source Resistance
    23 to 68 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.5 V
  • Gate Charge
    14 to 20 nC
  • Power Dissipation
    1.14 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    Power switching application, Hard switched and high frequency circuits, Halogen free

Technical Documents
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