RMD7N40DN

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RMD7N40DN Image

The RMD7N40DN from Rectron Semiconductor is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 16 to 29 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for RMD7N40DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMD7N40DN
  • Manufacturer
    Rectron Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    16 to 29 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    7.6 to 11 nC
  • Power Dissipation
    12 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN3x3
  • Applications
    Battery Protection, Load Switching, Point of Load

Technical Documents

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