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RMD8N60S8

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RMD8N60S8 Image

The RMD8N60S8 from Rectron Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 15 to 25 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for RMD8N60S8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMD8N60S8
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    15 to 25 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    58 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Power switching application, Load switch, Halogen free

Technical Documents
View details on the manufacturer's website
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