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RMP2N65TI

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RMP2N65TI Image

The RMP2N65TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 3600 to 4200 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RMP2N65TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP2N65TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    3600 to 4200 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7.4 nC
  • Power Dissipation
    23 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    High efficiency switch mode power supplies, Electronic lamp ballasts, Uninterruptible Power Supply(UPS)

Technical Documents
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