1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RMP6N65IP

RMP6N65IP

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RMP6N65IP Image

The RMP6N65IP from Rectron Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 1500 to 1650 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RMP6N65IP can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RMP6N65IP
  • Manufacturer
    Rectron Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    1500 to 1650 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    30 to 35 nC
  • Power Dissipation
    51 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252(D-PAK)
  • Applications
    High efficiency switch mode power supplies Applications, Electronic lamp ballasts, UPS

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products