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RSM90N120T7

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RSM90N120T7 Image

The RSM90N120T7 from Rectron Semiconductor is a MOSFET with Continous Drain Current 90 A, Drain Source Resistance 25 to 43 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.6 to 2.4 V. Tags: Through Hole. More details for RSM90N120T7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RSM90N120T7
  • Manufacturer
    Rectron Semiconductor
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    90 A
  • Drain Source Resistance
    25 to 43 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.6 to 2.4 V
  • Gate Charge
    54 nC
  • Power Dissipation
    463 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Switching power supply, Motor drives, High voltage inverters, Pulsed power applications

Technical Documents
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