Note : Your request will be directed to Renesas.
The 2SJ496 from Renesas is a MOSFET with Continous Drain Current -5 A, Drain Source Resistance 0.12 to 0.24 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage 20 V. Tags: Through Hole. More details for 2SJ496 can be seen below.
150 V N-Channel Enhancement Mode MOSFET
1200 V Automotive-Grade SiC MOSFET
-100 V P-Channel Power MOSFET
You can now find similar products from multiple companies on everything RF.
Our Newsletter will keep you up to date with the Power Electronics Industry.
By signing up for our newsletter you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Create an account on everything PE to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything PE to download datasheets, white papers and more content.
Fill the form to Download the Media Kit.
Fill the form to Download the Media Kit
Processing...Please wait.
