2SJ599-Z

Note : Your request will be directed to Renesas.

2SJ599-Z Image

The 2SJ599-Z from Renesas is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 60 to 111 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage 20 V, Gate Charge 26 nC. Tags: Through Hole. More details for 2SJ599-Z can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2SJ599-Z
  • Manufacturer
    Renesas
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    60 to 111 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    20 V
  • Gate Charge
    26 nC
  • Power Dissipation
    1 to 35 W
  • Package Type
    Through Hole
  • Package
    TO-252

Technical Documents

Latest MOSFETs

View more products