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2SJ647

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The 2SJ647 from Renesas is a MOSFET with Continous Drain Current -0.4 to 0.4 A, Drain Source Resistance 1170 to 2980 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Power Dissipation 0.2 W. Tags: Surface Mount. More details for 2SJ647 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2SJ647
  • Manufacturer
    Renesas
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.4 to 0.4 A
  • Drain Source Resistance
    1170 to 2980 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SSP

Technical Documents
View details on the manufacturer's website
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