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2SK2788

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2SK2788 Image

The 2SK2788 from Renesas is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 120 to 250 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Power Dissipation 1 W. Tags: Through Hole. More details for 2SK2788 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2SK2788
  • Manufacturer
    Renesas
  • Description
    60 V, 2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    120 to 250 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    UPAK
  • Applications
    High speed power switching

Technical Documents
View details on the manufacturer's website
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