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N0412N

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The N0412N from Renesas is a MOSFET with Continous Drain Current -100 to 100 A, Drain Source Resistance 2.7 to 3.7 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Charge 100 nC. Tags: Through Hole. More details for N0412N can be seen below.

Product Specifications

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Product Details

  • Part Number
    N0412N
  • Manufacturer
    Renesas
  • Description
    40 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -100 to 100 A
  • Drain Source Resistance
    2.7 to 3.7 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    100 nC
  • Power Dissipation
    119 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    For high current switching

Technical Documents
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