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RJE0605JPD

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The RJE0605JPD from Renesas is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 58 to 110 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -16 to 2.5 V, Power Dissipation 30 W. Tags: Surface Mount. More details for RJE0605JPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJE0605JPD
  • Manufacturer
    Renesas
  • Description
    -60 V, , P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 A
  • Drain Source Resistance
    58 to 110 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -16 to 2.5 V
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    DPAK(S)
  • Applications
    Power Switching

Technical Documents
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