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RJK4002DPD

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The RJK4002DPD from Renesas is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 2400 to 2900 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Charge 6 nC. Tags: Surface Mount. More details for RJK4002DPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJK4002DPD
  • Manufacturer
    Renesas
  • Description
    400 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    2400 to 2900 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Charge
    6 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MP-3A
  • Applications
    High Speed Power Switching

Technical Documents
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