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RJK5033DPD

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The RJK5033DPD from Renesas is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 960 to 1300 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Power Dissipation 65 W. Tags: Surface Mount. More details for RJK5033DPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJK5033DPD
  • Manufacturer
    Renesas
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    960 to 1300 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MP-3A
  • Applications
    High Speed Power Switching

Technical Documents
View details on the manufacturer's website
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