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RQK0603CGDQA

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The RQK0603CGDQA from Renesas is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 212 to 348 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Charge 2.8 nC. Tags: Surface Mount. More details for RQK0603CGDQA can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQK0603CGDQA
  • Manufacturer
    Renesas
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    212 to 348 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    2.8 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MPAK
  • Applications
    Power Switching

Technical Documents
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