1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Renesas
  6. RQK0605JGDQA

RQK0605JGDQA

Download Datasheet Request Quote

Note : Your request will be directed to Renesas.

RQK0605JGDQA Image

The RQK0605JGDQA from Renesas is a MOSFET with Continous Drain Current 3.1 A, Drain Source Resistance 82 to 131 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Charge 6.9 nC. Tags: Surface Mount. More details for RQK0605JGDQA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RQK0605JGDQA
  • Manufacturer
    Renesas
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.1 A
  • Drain Source Resistance
    82 to 131 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    6.9 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MPAK
  • Applications
    Power Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products