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UPA1932TE

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The UPA1932TE from Renesas is a MOSFET with Continous Drain Current -6 to 6 A, Drain Source Resistance 30 to 59 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Charge 20 nC. Tags: Surface Mount. More details for UPA1932TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UPA1932TE
  • Manufacturer
    Renesas
  • Description
    -30 V, 20 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 to 6 A
  • Drain Source Resistance
    30 to 59 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    20 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TMM

Technical Documents
View details on the manufacturer's website
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