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AG191FLD3HRBTL

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The AG191FLD3HRBTL from ROHM Semiconductor is a MOSFET with Continous Drain Current -80 to 80 A, Drain Source Resistance 5.9 to 10.5 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for AG191FLD3HRBTL can be seen below.

Product Specifications

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Product Details

  • Part Number
    AG191FLD3HRBTL
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 to 80 A
  • Drain Source Resistance
    5.9 to 10.5 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    13.0 to 22.0 nC
  • Switching Speed
    8.4 to 47 ns
  • Power Dissipation
    76 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive Systems
  • Note
    Input Capacitance :- 1570 pF

Technical Documents
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