The HP8KE6TB1 from ROHM Semiconductor is a Dual N-Channel Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of 100 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 73 milli-ohms. This MOSFET has a continuous drain current of ±17 A and a pulsed drain current of ±24 A. It has a power dissipation of less than 21 W. This RoHS-compliant MOSFET offers low on-resistance in a small package. It is available in a surface-mount package that measures 5.8 x 5 x 1.1 mm.
