HP8M31

Note : Your request will be directed to ROHM Semiconductor.

HP8M31 Image

The HP8M31 from ROHM Semiconductor is a MOSFET with Continous Drain Current -8.5 to 8.5 A, Drain Source Resistance 46 to 80 Milliohm, Drain Source Breakdown Voltage -60 to 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to 3 V. Tags: Surface Mount. More details for HP8M31 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HP8M31
  • Manufacturer
    ROHM Semiconductor
  • Description
    -60 to 60 V, 12.3 to 38 nC, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -8.5 to 8.5 A
  • Drain Source Resistance
    46 to 80 Milliohm
  • Drain Source Breakdown Voltage
    -60 to 60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to 3 V
  • Gate Charge
    12.3 to 38 nC
  • Power Dissipation
    7 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8D
  • Applications
    motor

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