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HT8KE6HTB1

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The HT8KE6HTB1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -12.5 to 12.5 A, Drain Source Resistance 47 to 88 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for HT8KE6HTB1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HT8KE6HTB1
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, -12.5 to 12.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -12.5 to 12.5 A
  • Drain Source Resistance
    47 to 88 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    1.5 to 6.3 nC
  • Switching Speed
    6.4 to 18 ns
  • Power Dissipation
    2.0 to 14 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Switching, Motor drives
  • Note
    Input Capacitance :- 320 pF

Technical Documents
View details on the manufacturer's website
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