The QH8KC6 from ROHM Semiconductor is a Dual Channel Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of over 60 V, a gate-source voltage of up to 20 V, and a drain-source on-resistance of 31 milli-ohms. This power MOSFET has a continuous drain current of up to 5.5 A and a power dissipation of less than 1.5 W. It has a low drain-source on-resistance, making it suitable for 24 V input equipment such as factory automation equipment, and motors mounted on base stations (cooling fans). This RoHS Complaint Power MOSFET is available in a surface-mount package that measures 3 x 2.8 x 0.85 mm.