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QS5U12

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QS5U12 Image

The QS5U12 from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 71 to 154 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for QS5U12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QS5U12
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    71 to 154 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    3.9 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-25T
  • Applications
    Load switch, DC/ DC conversion

Technical Documents
View details on the manufacturer's website
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