1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. QS8K21

QS8K21

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

QS8K21 Image

The QS8K21 from ROHM Semiconductor is a MOSFET with Continous Drain Current -4 to 4 A, Drain Source Resistance 38 to 75 Milliohm, Drain Source Breakdown Voltage 45 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for QS8K21 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    QS8K21
  • Manufacturer
    ROHM Semiconductor
  • Description
    45 V, 10 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4 to 4 A
  • Drain Source Resistance
    38 to 75 Milliohm
  • Drain Source Breakdown Voltage
    45 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    10 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products