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QS8K2HZG

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QS8K2HZG Image

The QS8K2HZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -3.5 to 3.5 A, Drain Source Resistance 38 to 77 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for QS8K2HZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    QS8K2HZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.5 to 3.5 A
  • Drain Source Resistance
    38 to 77 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    4.6 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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