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QS8M31

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QS8M31 Image

The QS8M31 from ROHM Semiconductor is a MOSFET with Continous Drain Current -3 to 3 A, Drain Source Resistance 93 to 266 Milliohm, Drain Source Breakdown Voltage -60 to 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to 2.5 V. Tags: Surface Mount. More details for QS8M31 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QS8M31
  • Manufacturer
    ROHM Semiconductor
  • Description
    -60 to 60 V, 4 to 7.2 nC, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3 to 3 A
  • Drain Source Resistance
    93 to 266 Milliohm
  • Drain Source Breakdown Voltage
    -60 to 60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to 2.5 V
  • Gate Charge
    4 to 7.2 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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