1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. R2P020N06HZGT100

R2P020N06HZGT100

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

The R2P020N06HZGT100 from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 190 to 335 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for R2P020N06HZGT100 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    R2P020N06HZGT100
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, -2 to 2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    190 to 335 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    5 nC
  • Switching Speed
    8 to 40 ns
  • Power Dissipation
    0.5 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Switching
  • Note
    Input Capacitance :- 160 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products