The R6000ENH from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.5 to 0.5 A, Drain Source Resistance 7300 to 14400 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for R6000ENH can be seen below.