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R6002END3

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R6002END3 Image

The R6002END3 from ROHM Semiconductor is a MOSFET with Continous Drain Current -1.7 to 1.7 A, Drain Source Resistance 2800 to 6000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for R6002END3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    R6002END3
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.7 to 1.7 A
  • Drain Source Resistance
    2800 to 6000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    6.5 nC
  • Power Dissipation
    26 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (DPAK)
  • Applications
    Switching Power Supply

Technical Documents
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