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R6004ENJ

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The R6004ENJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -4 to 4 A, Drain Source Resistance 900 to 1360 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for R6004ENJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    R6004ENJ
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4 to 4 A
  • Drain Source Resistance
    900 to 1360 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    58 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263 (D2PAK)
  • Applications
    Switching

Technical Documents
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