The R6011KND3 from ROHM Semiconductor is a MOSFET with Continous Drain Current -11 to 11 A, Drain Source Resistance 340 to 720 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for R6011KND3 can be seen below.