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R6509ENX

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R6509ENX Image

The R6509ENX from ROHM Semiconductor is a MOSFET with Continous Drain Current -9 to 9 A, Drain Source Resistance 530 to 1080 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for R6509ENX can be seen below.

Product Specifications

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Product Details

  • Part Number
    R6509ENX
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 to 9 A
  • Drain Source Resistance
    530 to 1080 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24 nC
  • Power Dissipation
    48 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FM
  • Applications
    Switching

Technical Documents
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