The R8001CND3FRA from ROHM Semiconductor is a MOSFET with Continous Drain Current -1 to 1 A, Drain Source Resistance 6700 to 8700 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 to 5.5 V. Tags: Surface Mount. More details for R8001CND3FRA can be seen below.