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R8001CND3FRA

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R8001CND3FRA Image

The R8001CND3FRA from ROHM Semiconductor is a MOSFET with Continous Drain Current -1 to 1 A, Drain Source Resistance 6700 to 8700 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 to 5.5 V. Tags: Surface Mount. More details for R8001CND3FRA can be seen below.

Product Specifications

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Product Details

  • Part Number
    R8001CND3FRA
  • Manufacturer
    ROHM Semiconductor
  • Description
    800 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1 to 1 A
  • Drain Source Resistance
    6700 to 8700 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 to 5.5 V
  • Gate Charge
    7.2 nC
  • Power Dissipation
    36 W
  • Temperature operating range
    150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (DPAK)
  • Applications
    Switching

Technical Documents
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