1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. R8005ANJ

R8005ANJ

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

R8005ANJ Image

The R8005ANJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -5 to 5 A, Drain Source Resistance 1600 to 3800 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for R8005ANJ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    R8005ANJ
  • Manufacturer
    ROHM Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5 to 5 A
  • Drain Source Resistance
    1600 to 3800 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    20 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263S
  • Applications
    Switching Power Supply

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products