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R8009KNX

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The R8009KNX from ROHM Semiconductor is a MOSFET with Continous Drain Current -9 to 9 A, Drain Source Resistance 500 to 600 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for R8009KNX can be seen below.

Product Specifications

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Product Details

  • Part Number
    R8009KNX
  • Manufacturer
    ROHM Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 to 9 A
  • Drain Source Resistance
    500 to 600 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    27 nC
  • Power Dissipation
    59 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FM
  • Applications
    Switching

Technical Documents
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