RA1C030LDT5CL

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RA1C030LDT5CL Image

The RA1C030LDT5CL from ROHM Semiconductor is an N-Channel Enhancement MOSFET that is ideal for switching circuits, single-cell batteries, and mobile applications. It has a drain-source breakdown voltage of over 20 V, a gate threshold voltage of up to 1.5 V, and a drain-source on-resistance of less than 140 milli-ohms. This MOSFET has a continuous drain current of up to 3 A and a power dissipation of less than 1 W. It is manufactured on ROHM’s proprietary IC process to achieve low power dissipation in conjunction with a greater degree of miniaturization. The power MOSFET is optimized in design that achieves a figure of merit (FOM) that is 20% lower than standard package products, thereby resulting in a significantly smaller board area and higher efficiency. It has a unique package structure that offers insulated protection for the side walls, reducing the risk of shorts due to contact between components in high-density compact devices. This RoHS-compliant MOSFET is available in a wafer-level package that measures 0.61 x 1 x 0.25 mm.

Product Specifications

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Product Details

  • Part Number
    RA1C030LDT5CL
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    0.61 x 1 x 0.25 mm
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    140 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    7 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    1.5 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Package
    WLCSP
  • Applications
    Switching circuits, Single-Cell Battery Applications, Mobile Applications

Technical Documents

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