The RA1C030LDT5CL from ROHM Semiconductor is an N-Channel Enhancement MOSFET that is ideal for switching circuits, single-cell batteries, and mobile applications. It has a drain-source breakdown voltage of over 20 V, a gate threshold voltage of up to 1.5 V, and a drain-source on-resistance of less than 140 milli-ohms. This MOSFET has a continuous drain current of up to 3 A and a power dissipation of less than 1 W. It is manufactured on ROHM’s proprietary IC process to achieve low power dissipation in conjunction with a greater degree of miniaturization. The power MOSFET is optimized in design that achieves a figure of merit (FOM) that is 20% lower than standard package products, thereby resulting in a significantly smaller board area and higher efficiency. It has a unique package structure that offers insulated protection for the side walls, reducing the risk of shorts due to contact between components in high-density compact devices. This RoHS-compliant MOSFET is available in a wafer-level package that measures 0.61 x 1 x 0.25 mm.