The RCX051N25 from ROHM Semiconductor is a MOSFET with Continous Drain Current -5 to 5 A, Drain Source Resistance 970 to 2950 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 to 5.5 V. Tags: Through Hole. More details for RCX051N25 can be seen below.